Author Affiliations
Abstract
1 Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK
2 National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
3 University of Chinese Academy of Sciences, Beijing 100049, China
4 Peng Cheng Laboratory, Shenzhen, China
5 e-mail: d.thomson@soton.ac.uk
We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, in conjunction with a modulation efficiency of and optical modulation extinction ratio, enabling C band 50 Gb/s NRZ communication link with a bit error rate . Individually, the speed of modulation and detection is measured up to 112 Gb/s and 80 Gb/s, respectively. The principle of co-designing the PN junction ring modulator and detector performance required for error-free communication links can significantly ease the fabrication yield challenges of ring structures by reducing the number of types of devices. The principle can also be applied to O band wavelengths. To the best of our knowledge, for the first time, a device of this type has achieved both error-free modulation and detection operation up to 50 Gb/s in the C band individually or in conjugation as an error-free communication link, which paves the way to realize a all-silicon WDM-based error-free optical transceiver link in the future and is essential for future programmable photonics circuits.
Photonics Research
2024, 12(4): 701
红外与激光工程
2024, 53(1): 20230444
Author Affiliations
Abstract
1 University Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology (C2N), Palaiseau 91120, France
2 University Grenoble Alpes, CEA, LETI, Grenoble 38000, France
3 Optoelectronics Research Centre, Zepler Institute for Photonics and Nanoelectronics, Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, UK
4 e-mail: jonathan.peltier@c2n.upsaclay.fr
5 e-mail: Weiwei.Zhang@soton.ac.uk
Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations. Beyond the plasma dispersion modulation, an alternative solution in silicon is to exploit the DC Kerr effect, which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field. Although some theoretical and experimental studies have shown its existence in silicon, limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far. This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides. The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations, and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides. High-speed optical modulation response is analyzed, and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c. voltage of 30 V. This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation.
Photonics Research
2024, 12(1): 51
红外与激光工程
2023, 52(11): 20230100
1 无锡学院江苏省集成电路可靠性技术及检测系统工程研究中心,江苏 无锡 214105
2 中国科学院长春光学精密机械与物理研究所,吉林 长春 130033
为了探究铟原子发生自适应迁移的临界厚度,首先测量得到InGaAs阱簇复合结构表面不同位置的自发辐射光谱。铟原子的自适应迁移会导致阱簇复合结构中同时产生铟含量正常的和损失的InxGa1-xAs区域,进而导致其自发辐射光谱具有特殊的双峰特征。通过对比光谱的双峰强度,计算并评估了正常In0.17Ga0.83As层的厚度起伏为4.6~6.4 nm,即铟原子发生自适应迁移的临界厚度为4.6 nm。通过对比4 nm传统InGaAs量子阱的单峰光谱特征,验证了铟原子发生自适应迁移临界厚度的准确性,该项研究对推动InGaAs阱簇复合量子限制结构的发展具有重要意义。
激光器 InGaAs/GaAs 富铟团簇 双峰光谱 临界厚度 光学学报
2023, 43(21): 2114001
1 中国科学院上海应用物理研究所上海 201800
2 中国科学院上海高等研究院 上海同步辐射光源上海 201204
3 中国科学院大学北京 100049
与白光X射线动态显微CT(Micro Computed Tomography)相比,单色光X射线动态显微CT具有较低的辐射损伤和较高的密度分辨率,但是更难以平衡其空间和时间分辨率。目前,单色光X射线动态显微CT的最高时间分辨率可达到13.3 Hz,探测器有效像素尺寸为5 μm。为了构建具有更高时空分辨率的单色光X射线动态显微CT系统,基于上海光源快速X光成像线站(BL16U2)的高通量密度单色光,将高速转台与三镜头大数值孔径快速X射线成像探测器相结合,构建了实验系统。以速发型聚氨酯材料为研究对象进行了验证实验,在15 keV单色光下动态显微CT的时间分辨率达到了20 Hz,探测器有效像素尺寸为2.2 μm。对气泡运动进行相关定量分析,证明该系统具有高时空分辨率和高对比度分辨率,可以对复杂运动系统进行四维时空定量分析,为BL16U2线站用户进行高时空分辨率的复杂原位研究提供了强大的实验平台。
X射线动态显微CT 快速X射线成像 X射线单色光显微CT 同步辐射 X-ray dynamic Micro-CT Fast X-ray imaging Monochromatic X-ray Micro-CT Synchrotron radiation
强激光与粒子束
2023, 35(6): 062002
强激光与粒子束
2023, 35(6): 062003